leshan radio company, ltd. vh3?1/4 vp d mc74vhc1g03 vp d 1 3 2 4 5 tsop?5/sot?23/sc?59 dt suffix case 483 the mc74vhc1g03 is an advanced high speed cmos 2?input nor gate with an open drain output fabricated with silicon gate cmos technology. it achieves high speed operation similar to equivalent bipolar schottky ttl while maintaining cmos low power dissipation. the internal circuit is composed of three stages, including an open drain output which provides the capability to set outp ut switching level. this allows the mc74vhc1g03 to be used to interface 5 v circuits to circuits of any voltage between v cc and 7 v using an external resistor and power supply. the mc74vhc1g03 input structure provides protection when voltages up to 7 v are applied, regardless of the supply voltage . high speed: t pd = 3.6 ns (typ) at v cc = 5 v low internal power dissipation: i cc = 2 ma (max) at t a = 25c power down protection provided on inputs pin and function compatible with other standard logic families chip complexity: fets = 62; equivalent gates = 16 sc?88a / sot?353/sc?70 df suffix case 419a 1 3 2 4 5 marking diagrams pin 1 d = date code pin 1 d = date code figure 1. pinout (top view) figure 2. logic symbol pin assignment 1 in b 2 in a 3 gnd 4 out y 5v cc function table inputs ou tput ab y ll z lh l hl l hh l ordering information see detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. 2?input nand gate with open drain output
leshan radio company, ltd. vh3?2/4 mc74vhc1g03 recommended operating conditions symbol parameter min max unit v cc dc supply voltage 2.0 5.5 v v in dc input voltage 0.0 5.5 v v out dc output voltage 0.0 7.0 v t a operating temperature range ? 55 + 125 c t r ,t f input rise and fall time v cc = 3.3 0.3 v 0 100 ns/v v cc = 5.0 0.5 v 0 20 device junction temperature versus time to 0.1% bond failures junction t ime, time, temperature c hours y ears 80 1,032,200 117.8 90 419,300 47.9 100 178,700 20.4 110 79,600 9.4 120 37,000 4.2 130 17,800 2.0 140 8,900 1.0 normalized failure rate figure 3. failure rate vs. time junction temperature 1 1 10 100 1000 maximum ratings symbol parameter value unit v cc dc supply voltage ? 0.5 to + 7.0 v v in dc input voltage ? 0.5 to 7.0 v v out dc output voltage v cc =0 ? 0.5 to 7.0 v high or low state ?0.5 to v cc + 0.5 i ik input diode current ?20 ma i ok output diode current v out < gnd; v out > v cc +20 ma i out dc output current, per pin + 25 ma i cc dc supply current, v cc and gnd +50 ma p d power dissipation in still air sc?88a, tsop?5 200 mw ja thermal resistance sc?88a, tsop?5 333 c/w t l lead temperature, 1 mm from case for 10 s 260 c t j junction temperature under bias + 150 c t stg storage temperature ?65 to +150 c v esd esd withstand voltage human body model (note 2) >2000 v machine model (note 3) > 200 charged device model (note 4) n/a i latch?up latch?up performance above v cc and below gnd at 125c (note 5) 500 ma 1. maximum ratings are those values beyond which damage to the device may occur. exposure to these conditions or conditions beyond those indicated may adversely affect device reliability. functional operation under absolute?maximum?rated conditions is not implied. functional operation should be restricted to the recommended operating conditions. 2. tested to eia/jesd22?a114?a 3. tested to eia/jesd22?a115?a 4. tested to jesd22?c101?a 5. tested to eia/jesd78 time, years
leshan radio company, ltd. vh3?3/4 dc electrical characteristics v cc t a = 25 c t a < 85 c ?55c < t a < 125c symbol parameter test conditions (v) min typ max min max min max unit v ih minimum high?level 2.0 1.5 1.5 1.5 v input voltage 3.0 2.1 2.1 2.1 4.5 3.15 3.15 3.15 5.5 3.85 3.85 3.85 v il maximum low?level 2.0 0.5 0.5 0.5 v input voltage 3.0 0.9 0.9 0.9 4.5 1.35 1.35 1.35 5.5 1.65 1.65 1.65 v oh minimum high?level v in = v ih or v il 2.0 1.9 2.0 1.9 1.9 v output voltage i oh = ? 50 a 3.0 2.9 3.0 2.9 2.9 v in = v ih or v il 4.5 4.4 4.0 4.4 4.4 v in = v ih or v il i oh = ?4 ma 3.0 2.58 2.48 2.34 i oh = ?8 ma 4.5 3.94 3.80 3.66 v ol maximum low?level v in = v ih or v il 2.0 0.0 0.1 0.1 0.1 v output voltage i ol = 50 a 3.0 0.0 0.1 0.1 0.1 v in = v ih or v il 4.5 0.0 0.1 0.1 0.1 v in = v ih or v il i ol = 4 ma 3.0 0.36 0.44 0.52 i ol = 8 ma 4.5 0.36 0.44 0.52 i in maximum input v in = 5.5 v or gnd 0 to5.5 0.1 1.0 1.0 a leakage current i cc maximum quiescent v in = v cc or gnd 5.5 2.0 20 40 a supply current i opd maximum off?state v out = 5.5 v 0 0.25 2.5 5.0 a leakage current mc74vhc1g03 ac electrical characteristics c load = 50 pf, input t r = t f = 3.0 ns t a = 25 c t a < 85 c ?55 c to 125 c symbol parameter test conditions min typ max min max min max unit t pzl maximum output v cc = 3.3 0.3 v c l = 15 pf 5.6 7.9 9.5 11.0 ns enable time, r l = r i = 500 ? c l = 50 pf 8.1 11.4 13.0 15.5 input a or b to y v cc = 5.0 0.5 v c l = 15 pf 3.6 5.5 6.5 8.0 r l = r i = 500 ? c l = 50 pf 5.1 7.5 8.5 10.0 t plz maximum output v cc = 3.3 0.3 v c l = 50 pf 8.1 11.4 13.0 15.5 ns disable time r l = r i = 500 ? v cc = 5.0 0.5 v c l = 50 pf 5.1 7.5 8.5 10.0 r l = r i = 500 ? c in maximum input 4 10 10 10 pf capacitance typical @ 25c, v cc = 5.0 v c pd power dissipation capacitance (note 6) 18 pf 6. c pd is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption witho ut load. average operating current can be obtained by the equation: i cc(opr) = c pd x v cc x f in + i cc . c pd is used to determine the no? load dynamic power consumption; p d = c pd x v cc 2 x f in + i cc x v cc .
leshan radio company, ltd. vh3?4/4 mc74vhc1g03 device ordering information device nomenclature device order number logic circuit indicator temp range identifier technology device function package suffix tape and reel suffix package type (name/sot#/ common name) tape and reel size mc74vhc1g03dft1 mc 74 vhc1g 03 df t1 sc?70/sc?88a/ 178 mm (7 in) sot?353 3000 unit mc74vhc1g03dft2 mc 74 vhc1g 03 df t2 sc?70/sc?88a/ 178 mm (7 in) sot?353 3000 unit mc74vhc1g03dft4 mc 74 vhc1g 03 df t4 sc?70/sc?88a/ 330 mm (13 in) sot?353 10,000 unit mc74vhc1g03dtt1 mc 74 vhc1g 03 dt t1 sot?23/tsops/ 178 mm (7 in) sc?59 3000 unit mc74vhc1g03dtt3 mc 74 vhc1g 03 dt t3 sot?23/tsops/ 330 mm (13 in) sc?59 10,000 unit figure 5. switching waveforms figure 4. output voltage mismatch application c l = 50 pf equivalent (includes jig and probe capacitance) r l = r 1 = 500 ? or equivalent r t = z out of pulse generator (typically 50 ? ) figure 6. test circuit figure 7. complex boolean functions figure 8. led driver figure 9. gtl driver 3
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